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2SJ200

Toshiba Semiconductor
Part Number 2SJ200
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown volta...
Datasheet PDF File 2SJ200 PDF File

2SJ200
2SJ200

Overview
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.
0 S (typ.
) z Complementary to 2SK1529 2SJ200 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Gate−source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg −180 V ±20 V −10 A 120 W 150 °C −55~150 °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-16 2SJ200 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
Max Unit Drain cut−off current Gate leakage current Drain−source breakdown voltage Gate−source cut−off voltage (Note 2) Drain−source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance IDSS IGSS V (BR) DSS VGS (OFF) VDS (ON) |Yfs| Ciss Coss Crss VDS = −180 V, VGS = 0 VDS = 0, VGS = ±20 V ID = −10 mA, VGS = 0 VDS = −10 V, ID = −0.
1 A ID = −6 A, VGS = −10 V VDS = −10 V, ID = −3 A VDS = −30 V, VGS = 0, f = 1 MHz VDS = −30 V, VGS = 0, f = 1 MHz VDS = −30 V, VGS = 0, f = 1 MHz ― ― −1.
0 mA ― ― ±0.
5 μA −180 ― ― V −0.
8 ― −2.
8 V ― −1.
5 −5.
0 V ― 4.
0 ― S ― 1...


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