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2SJ204

Freescale
Part Number 2SJ204
Manufacturer Freescale
Description P-Channel Logic Level MOSFET
Published Jul 3, 2019
Detailed Description Freescale 2SJ 204 P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density proc...
Datasheet PDF File 2SJ204 PDF File

2SJ204
2SJ204

Overview
Freescale 2SJ 204 P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process.
Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
Typical applications are voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application.
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Fast Switch • Low Gate Charge • Miniature SOT-23 Surface Mount Package Saves Board Space PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) 0.
20 @ VGS = -10 V 0.
30 @ VGS = -4.
5V G S ID (A) -2.
1 -1.
7 D ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -30 V ±20 -2.
1 -1.
7 A ±10 Continuous Source Current (Diode Conduction)a IS -0.
4 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.
25 0.
8 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 Symbol RT HJA Maximum Units 250 285 oC/W www.
freescale.
net.
cn Freescale 2SJ 204 SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Min Limits Typ Max Unit Static Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Threshold Voltage On-State Drain CurrentA IDSS IGSS VGS(th) ID(on) VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 55oC VDS = 0 V, VGS = ±20 V VDS = VGS, ID = -250 uA VDS = -5 V, VGS = -4.
5 V -1.
30 -3 -1 µA -10 ±100 nA V A Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb rDS(on) gfs VSD VGS = -10 V, ID = -2.
1 A VGS = -4.
5 V, ID = -1.
7 A VD...


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