DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ448
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ448 is P-Channel MOS Field Effect
Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters) 10.
0 ±0.
3 4.
5 ±0.
2 3.
2 ±0.
2 2.
7 ±0.
2
FEATURES
• Low On-Resistance
RDS(on) = 2.
0 Ω MAX.
(@ VGS = –10 V, ID = –2.
0 A)
• • • •
15.
0 ±0.
3
3 ±0.
1 4 ±0.
2
Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) –250
m25 m4.
0 m16
V V A A W W ˚C
1 2 3 0.
7 ±0.
1 ...