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2SJ410

Hitachi Semiconductor
Part Number 2SJ410
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ410 Silicon P-Channel MOS FET ADE-208-539 1st. Edition Application High speed power switching Features • • • • • L...
Datasheet PDF File 2SJ410 PDF File

2SJ410
2SJ410

Overview
2SJ410 Silicon P-Channel MOS FET ADE-208-539 1st.
Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline TO-220FM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SJ410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –200 ±20 –6 –24 –6 30 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ410 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min –200 ±20 — — –2.
0 — 2.
0 — — — — — — — — — Typ — — — — — 0.
7 3.
2 9...


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