2SJ450 Silicon P-Channel MOS FET ADE-208-381 1st.
Edition Application High speed power switching Features • • • • Low on-resistance.
Low drive power High speed switching 2.
5 V gate drive device.
Outline UPAK 2 1 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 G 2SJ450 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –60 ±20 –1 –2 –1 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 100 µs, duty cycle ≤ 10% 2.
When using aluminium ceramic board (12.
5 × 20 × 70 mm) 2 ...

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