2SJ451 Silicon P-Channel MOS FET ADE-208-382 1st.
Edition Application Low frequency power switching Features • • • • Low on-resistance.
Low drive power 2.
5 V gate drive device.
Small package (MPAK).
Outline MPAK 3 1 2 D 1.
Source 2.
Gate 3.
Drain G S 2SJ451 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% Marking is "ZK–".
Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings –20 ±20 –0.
2 –0.
4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)