2SJ471 Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features • Low on-resistance R DS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –30 –120 –30 30 150 –55 to +150 Unit V V A A A W °C °C 2 2SJ471 Electrica...

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