2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st.
Edition Features • Low on-resistance R DS(on) = 0.
08Ω typ (at VGS = –10 V, I D = –2.
5 A) • 4V gate drive devices.
• Large current capacitance ID = –5 A Outline TO-92MOD.
D G 3 S 2 1 1.
Source 2.
Drain 3.
Gate 2SJ483 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –30 ±20 –5 –20 –5 0.
9 150 –55 to +150 Unit V V A A A W °C °C Body to drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % Pch Tch Tstg 2 2SJ48...

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