DATA SHEET
MOS FIELD EFFECT POWER
TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect
Transistor designed for high current switching applications.
PACKAGE DIMENSIONS (in millimeter)
10.
0±0.
3 4.
5±0.
2 3.
2±0.
2 2.
7±0.
2
15.
0±0.
3
3±0.
1 4±0.
2
FEATURES
• Super Low On-State Resistance RDS(on)1 = 50 m: Max.
(VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max.
(VGS = –4 V, ID = –10 A) • Low Ciss Ciss = 2360 pF Typ.
0.
7±0.
1 2.
54
• Built-in Gate Protection Diode
13.
5 MIN.
12.
0±0.
2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain Current (pulse)**...