DATA SHEET
MOS FIELD EFFECT POWER
TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect
Transistor designed for high current switching applications.
PACKAGE DIMENSIONS
(in millimeter)
10.
0 ± 0.
3 3.
2 ± 0.
2 4.
5 ± 0.
2 2.
7 ± 0.
2
FEATURES
• Super Low On-State Resistance
15.
0 ± 0.
3 3 ± 0.
1 4 ± 0.
2
RDS(on)2 = 56 mΩ MAX.
(VGS = –4 V, ID = –15 A) • Low Ciss Ciss = 4120 pF TYP.
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain Current (pulse)** Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°...