Part Number
|
2SJ527S |
Manufacturer
|
Hitachi Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-640A (Z) 2nd. Edition Jun 1998 Feature...
|
Datasheet
|
2SJ527S
|
Overview
2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-640A (Z) 2nd.
Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.
3 Ω typ.
• Low drive current • 4 V gete drive devices • High speed switching
Outline
DPAK-1
4
4
D 1 2 G 3
S
1 2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SJ527(L),2SJ527(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings –60 ±20 –5 –20 –5 –5 2.
1 20 15...
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