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2SJ526

Hitachi Semiconductor
Part Number 2SJ526
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ526 Silicon P Channel MOS FET High Speed Power Switching ADE-208-579B (Z) 4th. Edition Jun 1998 Features • Low on-re...
Datasheet PDF File 2SJ526 PDF File

2SJ526
2SJ526

Overview
2SJ526 Silicon P Channel MOS FET High Speed Power Switching ADE-208-579B (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
11 Ω typ.
• Low drive current • 4 V gete drive devices • High speed switching Outline TO–220FM D G 1 2 S 1.
Gate 2.
Drain 3.
Source 3 2SJ526 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –12 –48 –12 –12 12 25 150 –55 to +150 Unit V V A A A A mJ W °C °C ...


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