Part Number
|
2SK1307 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK1307
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed swi...
|
Datasheet
|
2SK1307
|
Overview
2SK1307
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D G
1
2 3
1.
Gate 2.
Drain 3.
Source
S
2SK1307
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 100 ±20 20 80 20 35 ...
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