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2SK1305

Renesas
Part Number 2SK1305
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Jun 17, 2016
Detailed Description 2SK1305 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed swit...
Datasheet PDF File 2SK1305 PDF File

2SK1305
2SK1305

Overview
2SK1305 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 12 3 S REJ03G0924-0200 (Previous: ADE-208-1263) Rev.
2.
00 Sep 07, 2005 1.
Gate 2.
Drain 3.
Source Rev.
2.
00 Sep 07, 2005 page 1 of 6 2SK1305 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Item Symbol Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Forward transfer admittance Input capacitance |yfs| Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time td(on) tr td(off) tf VDF trr Note: 3.
Pulse test Min 100 ±20 — — 1.
0 — — 4.
5 — — — — — — — — — Typ — — — — — 0.
20 0.
25 7.
0 525 205 60 5 50 170 75 1.
2 220 Ratings 100 ±20 10 40 10 25 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Max — — ±10 250 2.
0 0.
25 0.
35 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V *3 ID = 5 A, VGS = 4 V *3 ID = 5 A, VDS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 Ω IF = 10 A, VGS = 0 IF =...


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