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2SK1305

Hitachi Semiconductor
Part Number 2SK1305
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed...
Datasheet PDF File 2SK1305 PDF File

2SK1305
2SK1305

Overview
2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK1305 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ±20 10 40 10 25 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1305 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 — — 1.
0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.
5 — — — — — — — — — Typ — — — — — 0.
20 0.
25 7.
0 525 205 60 5 50 170 75 1.
2 220 Max — — ±10 250 2.
0 0.
25 0.
35 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF/dt = 50 A/µs I D = 5 A, VGS = 10 V, RL = 6 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 V *1 I D = 5 A, VGS = 4 V *1 I D = 5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) See characteristic curves of 2SK1300.
3 2SK1305 Power vs.
Temperature Derating 30 Channel Dissipati...


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