2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator, DC-DC converter and motor driver
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* ...