2SK1317
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching
regulator, DC-DC converter and motor driver
Outline
TO-3P
D
G
1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 1500 ±20 2.
5 7...