2SK1328, 2SK1329
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator and DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1.
Gate 2.
Drain 3.
Source
2SK1328, 2SK1329
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 12 48 ...