TOSHIBA
Discrete Semiconductors
Field Effect
Transistor
Silicon N Channel MOS Type (π-MOS II.
5) High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
• Low Drain-Source ON Resistance
- RDS(ON) = 1.
1Ω (Typ.
) • High Forward Transfer Admittance
- Yfs = 4.
0S (Typ.
) • Low Leakage Current
- IDSS = 300µA (Max.
) @ VDS = 720V • Enhancement-Mode
- Vth = 1.
5 ~ 3.
5V @ VDS = 10V, ID = 1mA
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20kΩ) Gate-Source Voltage
Drain Current
DC
Pulse
Drain Power Dissipation (Tc = 25°C)
Channel Temperature
Storage Temperature Range
VDSS VDGR VGSS
ID IDP ...