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2SK208

Part Number 2SK208
Manufacturer Toshiba Semiconductor
Description Silicon N Channel Junction Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter ...
Datasheet 2SK208





Overview
2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.
0 nA (max) (VGS = −30 V) • Low noise: NF = 0.
5dB (typ.
) (RG = 100 kΩ, f = 120 Hz) • Small package.
Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −50 10 100 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant c...






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