2SK2096
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching
regulator, DC-DC converter Avalanche ratings
Outline
TO-3P
D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source
S
2SK2096
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω...