Part Number
|
2SK222 |
Manufacturer
|
Sanyo Semicon Device |
Description
|
N-Channel Junction Silicon FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
Ordering number:EN836G
N-Channel Junction Silicon FET
2SK222
Low-Frequency, Low Noise Amplifier Applications
Features
...
|
Datasheet
|
2SK222
|
Overview
Ordering number:EN836G
N-Channel Junction Silicon FET
2SK222
Low-Frequency, Low Noise Amplifier Applications
Features
· Ultralow noise figure.
· Large yfs.
· Low gate leakage current.
Package Dimensions
unit:mm 2019B
[2SK222]
5.
0 4.
0
4.
0
0.
6 2.
0 14.
0 5.
0
0.
45 0.
5
0.
45 0.
44
Specifications
123 1.
3 1.
3
1 : Source 2 : Gate 3 : Drain SANYO : NP JEDEC : TO-92 EIAJ : SC-43
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSS VGDS
IG PD Tj
Tstg
Conditions
Ratings 40
–40 10
300 125 –40 to +125
Unit V V mA
mW ˚C ˚C
Electrical Characteristics at Ta = 2...
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