2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ.
• High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain (Flange) 3.
Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note1 Ratings 60 ±20 40 160 40 40 137 50 150 –55...

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