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2SK2800

Hitachi Semiconductor
Part Number 2SK2800
Manufacturer Hitachi Semiconductor
Description Silicon N Channel MOS FET
Published Mar 30, 2005
Detailed Description 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features • Low on-r...
Datasheet PDF File 2SK2800 PDF File

2SK2800
2SK2800

Overview
2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ.
• High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain (Flange) 3.
Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note1 Ratings 60 ±20 40 160 40 40 137 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2800 Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.
5 — — 20 — — — — — — — — — Typ — — — — — 15 25 35 1500 720 200 20 180 200 ...


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