DatasheetsPDF.com

2SK2802

Hitachi Semiconductor
Part Number 2SK2802
Manufacturer Hitachi Semiconductor
Description Silicon N Channel MOS FET
Published Mar 30, 2005
Detailed Description 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C (Z) 4th. Edition Jun 1998 Features • Low o...
Datasheet PDF File 2SK2802 PDF File

2SK2802
2SK2802

Overview
2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.
2 Ω typ.
(VGS = 4 V, I D = 100 mA) • 2.
5V gate drive devices.
• Small package (MPAK) Outline MPAK 3 1 D 2 G 1.
Source 2.
Gate 3.
Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 30 ±10 0.
5 1.
0 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±10 — — 0.
5 — — 0.
7 — — — — — — — Typ — — — — — 0.
2 0.
3 1.
2 14.
0 68 3.
0 0.
27 1.
5 2.
2 2.
15 Max — — 1.
0 ±10 1.
5 0.
28 0.
5 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test Conditions I D = 100µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±6.
5V, VDS = 0 I D = 10µA, VDS = 5V I D = 100 mA VGS = 4V Note2 I D = 40 mA VGS = 2.
5V Note2 I D = 250 mA VDS = 10V Note2 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 250 mA RL = 40Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 2.
Pulse test 3.
Marking is “ZV–” t d(on) tr t d(off) tf 2 2SK2802 Main Characteristics Power vs.
Temperature Derating 200 Pch (mW) I D (A) Maximum Safe Operation Area 1 ms 5 2 1 0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 150 PW DC Channel Dissipation Drain Current 100 Op = (1 10 m sh s ot ) er at 50 Operation in this area is limited by R DS(on) ion 0 50 100 150 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)