Part Number
|
2SK2802 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N Channel MOS FET |
Published
|
Mar 30, 2005 |
Datasheet
|
2SK2802
|
Features
• Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
MPAK
3 1
D
2
G
1. Source 2. Gate 3. Drain
S
2SK2802
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltag...
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