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2SK2806

Part Number 2SK2806
Manufacturer Fuji Electric
Description N-channel MOS-FET
Published Mar 30, 2005
Detailed Description 2SK2806-01 FAP-IIIB Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche ...
Datasheet 2SK2806




Overview
2SK2806-01 FAP-IIIB Series Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 0,02Ω 35A 30W Outline Drawing Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 35 140 ±16 129,3 30 150 -55 ~ +150 * L=0,07mH, VCC=12V Equivalent Circuit Unit V A A ...






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