Part Number
|
2SK2869 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK2869
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-570 1st. Edition Features
• Low on-resistance R DS...
|
Datasheet
|
2SK2869
|
Overview
2SK2869
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-570 1st.
Edition Features
• Low on-resistance R DS = 0.
033 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK2869
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3...
Similar Datasheet