2SK291 Silicon N-Channel Junction FET Application Low frequency low noise amplifier Outline TO-92 (2) 1.
Drain 2.
Source 3.
Gate 3 2 1 2SK291 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings –15 –15 50 5 300 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Symbol V(BR)GDO V(BR)GSO I GSS I DSS* 1 Min –15 –15 ...

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