DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3111
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver.
ORDERING INFORMATION
PART NUMBER 2SK3111 2SK3111-S 2SK3111-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
• Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 180 mΩ MAX.
(VGS = 10 V, ID = 10 A) • Low input capacitance Ciss = 1000 pF TYP.
(VDS = 10 V, VGS = 0 V) • Avalanche capability rated • Built-in gate protection diode • Surface mount device available
ABSOLUTE MAXIMU...