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2SK3107

NEC
Part Number 2SK3107
Manufacturer NEC
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIP...
Datasheet PDF File 2SK3107 PDF File

2SK3107
2SK3107

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.
5-V power source.
The 2SK3107 has excellent switching characteristics, and is suitable for 1.
6 ± 0.
1 PACKAGE DRAWING (Unit : mm) 0.
3 ± 0.
05 0.
1 +0.
1 –0.
05 0.
8 ± 0.
1 use as a high-speed switching device in digital circuits.
D 0 to 0.
1 G S 0.
2 0.
5 +0.
1 –0 FEATURES • Can be driven by a 2.
5-V power source • Low gate cut-off voltage 0.
5 0.
6 0.
75 ± 0.
05 1.
0 1.
6 ± 0.
1 ORDERING INFORMATION PART NUMBER 2SK3107 PACKAGE SC-75(USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) 5 Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±0.
1 ±0.
4 200 150 –55 to +150 V V A A mW °C °C EQUIVALENT CIRCUIT Drain Gate Body Diode Total Power Dissipation Channel Temperature Storage Temperature Gate Protection Diode Marking: D1 Source Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2.
Mounted on ceramic substrate of 3.
0 cm x 0.
64 mm Remark 2 The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D13802EJ2V0DS00 (2nd edition) Date Published August 1999 NS CP(K) Printed in Japan The mark 5 shows major revised points.
© 1999 2SK3107 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistanc...


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