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2SK3107C

Renesas
Part Number 2SK3107C
Manufacturer Renesas
Description N-CHANNEL MOSFET
Published Jul 11, 2016
Detailed Description Preliminary Data Sheet 2SK3107C N-CHANNEL MOSFET FOR SWITCHING R07DS1286EJ0200 Rev.2.00 Jul 16, 2015 Description The ...
Datasheet PDF File 2SK3107C PDF File

2SK3107C
2SK3107C

Overview
Preliminary Data Sheet 2SK3107C N-CHANNEL MOSFET FOR SWITCHING R07DS1286EJ0200 Rev.
2.
00 Jul 16, 2015 Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.
5 V power source.
Features  Directly driven by a 4.
5 V power source.
 Low on-state resistance RDS(on)1 = 2.
7  MAX.
(VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.
2  MAX.
(VGS = 4.
5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package 2SK3107C-T1-A/AT -A:Sn-Bi , -AT:Pure Sn 3000p/Reel SC-75 (3pUSM) Remark "-A/AT" indicates Pb-free.
This product does not contain Pb in external electrode and other parts.
Marking XP Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 Gate to Source Voltage (VDS = 0 V) VGSS 20 Drain Current (DC) ID(DC) 200 Drain Current (pulse) Note1 ID(pulse) 800 Total Power Dissipation Note2 PT 200 Channel Temperature Tch 150 Storage Temperature Tstg 55 to 150 Note 1.
PW  10 s, Duty Cycle  1% Note 2.
Mounted on ceramic substrate of 3.
0 cm2 x 0.
64 mm V V mA mA mW C C R07DS1286EJ0200 Rev.
2.
00 Jul 16, 2015 Page 1 of 6 2SK3107C Electrical Characteristics (TA = 25C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Body Diode Forward Voltage Note Note Pulsed  Test Circuit Switching Time Symbol Test Conditions IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG VF(S-D) VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 10 V, ID = 100 mA VGS = 10 V, ID = 100 mA VGS = 4.
5 V, ID = 50 mA VDS = 10 V, VGS = 0 V, f = 1.
0 MHz VDD = 10 V, ID = 200 mA, VGS = 10 V, RG = 10  ID = 200 mA, VDD = 25 V, VGS = 10 V ...


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