2SK3130
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3130
Switching
Regulator Applications
Unit: mm • • • • • • Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.
12 Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 40 345 6 4 150 −55~150 Unit ...