2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B (Z) 3rd.
Edition February 1999 Features • Low on-resistance R DS(on) = 4.
5 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain(Flange) 3.
Source 2SK3136 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg Note 3 Note 3 Note 2 Note 1 Ratings 40 ±20 75 300 75 50 333 100 150 –...

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