2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A (Z) 2nd.
Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note 1 Ratings 30 ±20 60 240 60 35 122 35 150 –55 to +150 Unit V V A A A...

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