2SK3149 Silicon N Channel MOS FET High Speed Power Switching ADE-208-749A (Z) 2nd.
Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain(Flange) 3.
Source 2SK3149 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 20 60 20 20 40 50 150 –55 to +150 Unit V V A A ...

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