Part Number
|
2SK3157 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK3157
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-769A (Z) 2nd. Edition Februaty 1999 Features
• Low...
|
Datasheet
|
2SK3157
|
Overview
2SK3157
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-769A (Z) 2nd.
Edition Februaty 1999 Features
• Low on-resistance R DS = 50 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1 2 S
1.
Gate 2.
Drain 3.
Source
3
2SK3157
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 150 ±20 20 80 20 20 30 35 150 –55 to +150
Unit V V A A A A mJ W...
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