Part Number
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2SK3158 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK3158
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-757A(Z) Target Specification 2nd. Edition December...
|
Datasheet
|
2SK3158
|
Overview
2SK3158
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-757A(Z) Target Specification 2nd.
Edition December 1998 Features
• Low on-resistance R DS =35mΩ typ.
• High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1.
Gate 2.
Drain(Flange) 3.
Source
2SK3158
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 150 ±20 30 120 30 30 67 100 150 –55 to +...
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