Part Number
|
2SK3229 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
2SK3229
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-766(Z) Target specification 1st. Edition December ...
|
Datasheet
|
2SK3229
|
Overview
2SK3229
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-766(Z) Target specification 1st.
Edition December 1998 Features
• Low on-resistance R DS(on) =6mΩ typ.
• Low drive current • 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G 1 2 3
S
1.
Gate 2.
Drain 3.
Source
2SK3229
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings 80 ±20 60 240 60 50 181 35 150 –55 to +150
Unit V V A A A A...
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