DatasheetsPDF.com

2SK3209

Renesas
Part Number 2SK3209
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Apr 8, 2016
Detailed Description 2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed ...
Datasheet PDF File 2SK3209 PDF File

2SK3209
2SK3209

Overview
2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.
3.
00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1.
Gate 2.
Drain 3.
Source 12 3 S Rev.
3.
00 Sep 07, 2005 page 1 of 3 2SK3209 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 150 ±20 25 100 25 25 46 35 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4.
Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 150 ±20 — — 1.
0 — — 18 — — — — — — — — — Typ — — — — — 40 45 30 2600 820 350 25 180 600 280 0.
90 100 Max — — ±10 10 2.
5 45 63 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 150 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V*4 ID = 15 A, VGS = 4 V*4 ID = 15 A, VDS = 10 V*4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 15 A, VGS = 10 V, RL = 2 Ω IF = 25 A, VGS ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)