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2SK3207

Hitachi Semiconductor
Part Number 2SK3207
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999...
Datasheet PDF File 2SK3207 PDF File

2SK3207
2SK3207

Overview
2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A(Z) Target Specification 2nd.
Edition Feb 1999 Features • Low on-resistance R DS = 70 mΩ typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2 S 1.
Gate 2.
Drain 3.
Source 3 2SK3207 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 150 ±20 18 72 18 18 24 35 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK3207 Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 ±20 — — 1.
0 — — 11 — — — — — — — — — Typ — — — — — 70 85 18 1100 350 170 15 110 270 130 0.
9 150 Max — — ±10 10 2.
5 90 120 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 18A, VGS = 0 I F = 18A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 150 V, VGS = 0 I D = 1mA, VDS = 10V I D = 9A, VGS = 10V*4 I D = 9A, VGS = 4V*4 I D = 9A, VDS = 10V*4 VDS = 10V VGS = 0 f = 1MHz I D = 9A, VGS = 10V RL = 3.
33Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF Body–drain diode reverse recovery t rr time Note: 4.
Pulse test 3 2SK3207 Package Dimensions Unit: mm 10.
0 ± 0.
3 7.
0 ± 0.
3 φ 3.
2 ...


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