2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743C (Z) 4th.
Edition.
June 1999 Features • Low on-resistance R DS =1.
26 Ω typ.
(V GS = 10 V , ID = 150 mA) R DS = 2.
8 Ω typ.
(VGS = 4 V , ID = 50 mA) • 4 V gate drive device.
• Small package (CMPAK) Outline CMPAK 3 1 D 2 G 1.
Source 2.
Gate 3.
Drain S 2SK3289 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 300 1.
2 300 300 150 –55 to +150 Unit V V mA A mA mW °C °C 1.
PW...

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