polyfet rf devices
General Description
LX803
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications.
RF POWER LDMOS
TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast FM/AM, MRI, Laser Driver and others.
Package Style LX2 TM "Polyfet" process features low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft
transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency.
o ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.
25 o C/W Maximum Junction Temperature 200...