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LX802

Polyfet RF Devices
Part Number LX802
Manufacturer Polyfet RF Devices
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published Mar 30, 2005
Detailed Description polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet PDF File LX802 PDF File

LX802
LX802

Overview
polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.
0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance o 1.
80 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 4.
5 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 55 TYP 30.
0 WATTS OUTPUT ) MAX...


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