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LX803

Part Number	LX803
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices General Description LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE EN...
Datasheet	LX803 PDF File

Overview

polyfet rf devices General Description LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications.
RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast FM/AM, MRI, Laser Driver and others.
Package Style LX2 TM "Polyfet" process features low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency.
o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.
25 o C/W Maximum Junction Temperature 200...

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