Part Number
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FDB8874 |
Manufacturer
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Fairchild Semiconductor |
Description
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N-Channel MOSFET |
Published
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Mar 30, 2005 |
Detailed Description
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FDB8874
November 2004
FDB8874
N-Channel PowerTrench® MOSFET 30V, 121A, 4.7mΩ
General Description
This N-Channel MOSFET...
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Datasheet
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FDB8874
|
Overview
FDB8874
November 2004
FDB8874
N-Channel PowerTrench® MOSFET 30V, 121A, 4.
7mΩ
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features
• rDS(ON) = 4.
7mΩ , VGS = 10V, ID = 40A • rDS(ON) = 6.
0mΩ , VGS = 4.
5V, ID = 40A • High performance trench technology for extremely low rDS(ON) • Low gate charge
Applications
• DC/DC converters
• High power and current handling capability
D
GATE
G
SOURCE DRAIN (FLANGE)
TO-263AB
FDB SERIES
S
MOSFET Maximum Ratings TC = 25°C unl...
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