DatasheetsPDF.com

FDB8880

Part Number	FDB8880
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 26, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-sour...
Datasheet	FDB8880 PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 116mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 54 A PD Total Dissipation 55 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal r...

Similar Datasheet

FDB8832 N-Channel MOSFET - Fairchild Semiconductor
FDB8860 N-Channel MOSFET - Fairchild Semiconductor
FDB8860_F085 N-Channel Logic Level PowerTrench MOSFET - Fairchild Semiconductor
FDB8870 N-Channel MOSFET - Fairchild Semiconductor
FDB8870-F085 N-Channel Power MOSFET - ON Semiconductor
FDB8874 N-Channel MOSFET - Fairchild Semiconductor
FDB8880 N-Channel MOSFET - Fairchild Semiconductor
FDB8880 N-Channel MOSFET - INCHANGE
FDB8896 N-Channel MOSFET - Fairchild Semiconductor
FDB8896-F085 N-Channel Power MOSFET - ON Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)