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FDB8874

Part Number	FDB8874
Manufacturer	Fairchild Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	FDB8874 November 2004 FDB8874 N-Channel PowerTrench® MOSFET 30V, 121A, 4.7mΩ General Description This N-Channel MOSFET...
Datasheet	FDB8874 PDF File

Overview

FDB8874 November 2004 FDB8874 N-Channel PowerTrench® MOSFET 30V, 121A, 4.
7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Features • rDS(ON) = 4.
7mΩ , VGS = 10V, ID = 40A • rDS(ON) = 6.
0mΩ , VGS = 4.
5V, ID = 40A • High performance trench technology for extremely low rDS(ON) • Low gate charge Applications • DC/DC converters • High power and current handling capability D GATE G SOURCE DRAIN (FLANGE) TO-263AB FDB SERIES S MOSFET Maximum Ratings TC = 25°C unl...

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