FDG6316P December 2001 FDG6316P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features • –0.
7 A, –12 V.
RDS(ON) = 270 mΩ @ VGS = –4.
5 V RDS(ON) = 360 mΩ @ VGS = –2.
5 V RDS(ON) = 650 mΩ @ VGS = –1.
8 V Applications • Battery management • Load switch • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package D G S S 1 or 4 G 2 or 5 D 3 or 6 6 or 3 D 5 or 2 G 4 or 1 S Pin 1 S G D SC70-6 The pinouts are symmetrical; pin 1 and pi...

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