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FDG6313N

Fairchild Semiconductor
Part Number FDG6313N
Manufacturer Fairchild Semiconductor
Description Dual N-Channel Digital FET
Published Feb 26, 2009
Detailed Description www.DataSheet4U.com April 2002 FDG6313N Dual N-Channel, Digital FET General Description These dual N-Channel logic lev...
Datasheet PDF File FDG6313N PDF File

FDG6313N
FDG6313N

Overview
www.
DataSheet4U.
com April 2002 FDG6313N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features 25 V, 0.
50 A continuous, 1.
5 A peak.
RDS(ON) = 0.
45 Ω @ VGS= 4.
5 V, RDS(ON) =0.
60 Ω @ VGS= 2.
7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.
5 V).
Gate-Source Zen...


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